MEMORY TECHNOLOGIES
NVMe U.2 industrial enterprise SSDs
boast ultra high endurance
Greenliant is now sampling its NVMe U.2 EnduroSLC Industrial
Enterprise EX Series solid state drives (SSDs) to customers
that require ultra high endurance primary
storage with low latency and high performance
in extreme environments. The new
series provides ultra robust data retention
and ultra high system-level lifetime endurance
of 30 drive writes per day (DWPD) for
5 years. Designed with 1-bit-per-cell (SLC)
NAND chips, the SSDs are offered in capacities
from 800 GB to 1.92 TB, reaching up to
2,600/1,900 MB/s read/write. On-chip adaptive RAID improves
SSD reliability and power interrupt data protection helps prevent
data corruption during power failures. The units operate
between -40 and +85ºC and supports AES 256-bit encryption
and crypto erase.
Greenliant
www.greenliant.com
Industrial SSD controller
designed for extreme temperatures
Hyperstone’s X1 SSD flash memory controller has been rigorously
tested in sudden power fail situations and for reliability,
offering superb FIT
rates, according to
the manufacturer.
The industrial flash
controller with hyMap
firmware, hyReliability
features and full SATA
compliance is now in
mass production. In
addition to comprehensive
NAND
flash support for industrial applications, Hyperstone provides
extensive health monitoring tools enabling advanced system
level qualifications. The X1 SATA III SSD controller features a
powerful and efficient proprietary dual-core processor with
advanced security features to ensure bulletproof operation. Hyperstone’s
eXtended Endurance (FlashXE) feature, SRAM ECC
and end-to-end data path protection are vital in guaranteeing
an industrially stable system with today’s flashes. In addition,
the X1 features extremely low power consumption and the
silicon is designed for extreme temperature environments.
Hyperstone GmbH
www.hyperstone.com
FPGA-based NVMe data storage targets HPC
Aldec has launched an FPGA-based NVMe data storage
solution to aid in the
development of High
Performance Computing
(HPC) applications such
as high frequency trading
and machine learning. The
solution includes an Aldec
TySOM embedded prototyping
board, up to eight
high-bandwidth, low-latency
FMC-NVMe daughter
cards, and a reference
design (including source files and binaries) allowing engineers
to fast-track their projects. The FMC-NVMe provides four Non-
Volatile Memory express (NVMe) interfaces. These are connected
to a Microsemi PM8532 PCIe Switch, which provides
a connection-to-carrier-card via the PCIe x8 GEN3 interface
using a standard FMC connector. To make life easier for HPC
application developers, Aldec has prepared a reference design
that can be used with either its TySOM-3A-ZU19EG or TySOM-
3-ZU7EV embedded development board. Both boards are
based on Xilinx Zynq UltraScale+ MPSoC technology, which incorporates
high-performance application processor (APU) with
DDR4 system memory controller and hardened configurable
PCIe GEN3 blocks in the programmable logic part. These features
enable the boards to implement a rich-featured Root Port
of PCIe Root Complex solution to meet the underlying physical
layer requirements of the NVMe protocol.
Aldec
www.aldec.com
SPI EERAM memory up to 1Mb
slash design costs
Microchip has released a new family of Serial Peripheral Interface
(SPI) EERAM memory products which, according to the
company, offers system
designers up to 25 percent
cost savings over
the current serial Non-
Volatile RAM (NVRAM)
alternatives. Applications
from smart meters
to manufacturing lines,
that require repetitive
task data-logging, must
be able to automatically restore content if power is disrupted
during processing. Current low-density (64 Kb to 1Mb) NVRAM
solutions used for these data logs are typically the highest
price-per-bit memory in the resulting end products. EERAM is
a standalone non-volatile RAM memory that uses the same SPI
and I2C protocols as serial SRAM, enabling devices to retain
SRAM content during power loss without using an external
battery. All non-volatile aspects of the part are essentially invisible
to the user. When the device detects power going away, it
automatically transfers the SRAM data to non-volatile storage
and moves it back to the SRAM once power returns to the
part. In manufacturing lines, for example, stations handle up to
millions of tasks over their lifetimes and lost data during a task
can require overhauling or discarding items. EERAMs automatically
store SRAM content in these settings, allowing the manufacturing
line to resume where the task was disrupted. The
primary reason EERAM is available at a lower price point is the
use of standard Complementary Metal-oxide Semiconductor
(CMOS) and Flash processes. Because these are the highest
volume and most widely used processes, they offer the best
reliability and lowest cost in the industry. Alternative solutions
such as Ferroelectric RAM (FRAM) use a specialty process,
resulting in much higher costs and unstable long-term supply.
Microchip Technology
www.microchip.com
www.eenewseurope.com eeNews Europe January 2020 News 43
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/www.hyperstone.com
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/www.microchip.com
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